0.4 +0.1 -0.1 2.9 +0.1 -0.1 0.95 +0.1 -0.1 1.9 +0.1 -0.1 2.4 +0.1 -0.1 1.3 +0.1 -0.1 0-0.1 0.38 +0.1 -0.1 0.97 +0.1 -0.1 0.55 0.4 1.base 2.emitter 3.collector 12 3 unit: mm sot-23 0.1 +0.05 -0.01 FMMT3903 absolute maximum ratings ta = 25 parameter symbol rating unit collector-base voltage v cbo 60 v collector-emitter voltage v ceo 40 v emitter-base voltage v ebo 6v collector current i c 200 ma power dissipation p tot 330 mw operating and storage temperature range t j, t stg -55to+150 features switching transistors product specification sales@twtysemi.com 1 of 2 http://www.twtysemi.com 4008-318-123
smd type ic smd type transistors marking marking 1w electrical characteristics ta = 25 parameter symbol testconditons min typ max unit collector-base breakdown voltage v (br)cbo i c =10a 60 v collector-emitter breakdown voltage v (br)ceo i c =1ma 40 v emitter-base breakdown voltage v (br)ebo i e =10a 6v collector cutoff current i cex v ce =30v, v be(off) =3v 50 na emitter cut-off current i bex v ce =30v, v eb(off) =3v 50 na dc current gain * h fe i c =10ma, v ce =1v 50 150 collector-emitter saturation voltage * v ce( sat) i c =10ma, i b =1ma i c =50ma, i b =5ma 0.2 0.3 v base-emitter saturation voltage * v be( sat) i c =10ma, i b =1ma i c =50ma, i b =5ma 0.65 0.85 0.95 v current-gain-bandwidth product f t i c =10ma, v ce =20v f=100mhz 250 mhz output capacitance c obo v cb =5v, i e =0, f=100khz 4pf input capacitance c ibo v be =0.5v, i c =0, f=100khz 8pf noise figure nf v ce =5v i c =200a,r g =2k f=30hz to 15khz at-3db points 6db delay time t d 35 ns rise time t r 35 ns storage time t s 175 ns fall time t f 50 ns * pulse test: tp 300s; d 0.02. v cc =3v, i c =10ma,i b1 =1ma v be(off) =0.5v v cc =3v, i c =10ma i b1 =i b2 =1ma FMMT3903 product specification sales@twtysemi.com 2 of 2 http://www.twtysemi.com 4008-318-123
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